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Vacuum Sintering Process for SiC (Silicon Carbide)

2026-05-26 09:02

I. Process Principle

SiC vacuum pressureless sintering is conducted under vacuum conditions without the application of external pressure. Densification is achieved through high temperatures (1950–2200°C) combined with sintering aids, utilizing either solid-phase diffusion (B/C system) or liquid-phase sintering (Al₂O₃-Y₂O₃ system). This process allows for the attainment of a relative density of ≥98%.

II. Process Parameters

1) Solid-Phase Sintering (B₄C + C; High Thermal Conductivity / High Purity)

  • SiC: 98.5–99% (Sub-micron β-SiC, 0.4–0.8 μm)
  • B₄C: 0.5% (Sintering aid; grain refinement)
  • C: 1.0% (Reduction of SiO₂; oxidation prevention)

III. Process Flow

1. Raw Material Pre-treatment

  • Ball Milling: SiC powder + sintering aids + ethanol; 24–48 hours
  • Drying: Rotary evaporation + Oven drying
  • Sieving: 200–325 mesh; removal of agglomerates

2. Forming

  • Dry Pressing: 50–100 MPa
  • Cold Isostatic Pressing (Optional): 200–300 MPa; improves uniformity

3. Debinding (Binder Removal)

  • Vacuum Level: ≤10⁻¹ Pa
  • Heating Profile: Room Temperature → 600°C (2°C/min), hold for 1–2 hours
  • 600°C → 1200°C (5°C/min), hold for 1 hour

4. Vacuum Sintering

  • Vacuum Level: ≤10⁻² Pa
  • Temperature: Typically heated to 2050°C and held for 1–2 hours
  • Furnace Cooling: (≤5°C/min; prevents cracking)

5. Post-processing

  • Grinding / Polishing: Surface roughness Ra 0.1–0.5 μm
  • Cleaning: Ultrasonic cleaning + Alcohol; drying

Ⅳ. Process Advantages

  • Oxidation-Free: A vacuum environment prevents oxidation, ensuring purity and hardness.
  • Thorough Dewaxing: Achieved through vacuum extraction combined with high-temperature vaporization, resulting in residual wax levels of less than 0.01%.
  • High Density: Attains 98–99.5% of theoretical density, offering exceptional strength and wear resistance.
  • Eco-Friendly: Wax vapor is condensed and recovered, resulting in zero exhaust emissions.

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SIMUWU vacuum dewaxing sintering furnace featuring an intelligent digital control system for high-density SiC vacuum pressureless sintering

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